We provide buried layer epi for a wide variety of specifications. These range from thin (0.7 µm) to thick (> 10 µm) layers. We have extensive experience with optimizing minimal pattern shift and distortion in thicker buried layers, and in optimizing other critical parameters ( in situ HCl etch, etc.). Fast turnaround and high yields are standard.

A majority of our high volume production is on 200 mm and 150 mm wafer diameters. We have 13 ASM Epsilon One 2000 reactors. Volume production for typical buried layer epitaxy exceeds 700 wafers per week, per reactor

The following are typical statistical process control charts on current production specifications.