Product 3

Etch Stop Layers
	Si:B, SiGe:B
	Si:B and SiGe:B offer high performance etchstop layers for micro electromechanical systems (MEMS). SiGe:B offers the possibility of tensile to stress - free layers.

	SiGeC: a New Material
	High etch selectivity Epitaxial on Si Defect-free heterojunctions Boron diffusion reduced >10x Product of extensive research Funding: AF, BMDO, DARPA Collaborators: ASU, Auburn U.,HRL Labs, Stanford U., UCD, UCSD
	SiGeC Selective Etch Features
	SiGeC provides high selectivity Up to 2000:1 in KOH Up to 1:200 in HNA No electrically active dopant needed Controllable stress Patented technology
	Etch Selectivity of SiGeC in KOH

	Etch Selectivity of SiGeC in HNA

	Other SiGeC Properties
	Compressive, tensile or stress-free Doping is optional Thickness 50Å to 1 mm Atomically sharp interfaces Boron diffusion is suppressed Suitable for MEMS/IC integration Increased IR absorption Suitable for <800°C processing