Monte Lawrence President & CEO
Lawrence Semiconductor Research Laboratory, Inc. was incorporated in 1992 to engage in the research and development of Group IV epitaxial processes. Epitaxial layers have a fundamental effect on the operating characteristics of all semiconductor devices such as transistors and integrated circuits (analog and digital). Additionally, the developing field of Microelectromechanical Structures (MEMS) also relies upon epitaxial layers in the production of a wide variety of sensors and actuators.
Lawrence Semiconductor Research Laboratory was initially funded by Small Business Innovative Research (SBIR) grants and a process development program with the U.S. semiconductor consortium, SEMATECH. From these beginnings, Lawrence Semiconductor Research Laboratory developed into a research resource for industry, academia, and government. We have developed epitaxial structures ranging from sub-micron selective epitaxial growth for CMOS applications to large area imagers for the Hubble and Spitzer space telescopes, isotopically enriched Silicon, and Silicon-on-Sapphire (SOS) for high density communications applications. Lawrence Semiconductor Research Laboratory has a broad range of experience in Silicon-Germanium and Silicon-Germanium-Carbon materials.
In 2002, the Company completed it’s second quality certification, added capacity, and entered into the business of high-volume production epitaxial services. The Company continues to support customers around the world with industry-leading quality and yield.